Diodes IncorporatedUnited States
MMDT5401
Single Bipolar TransistorsAll alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Ic-最大集电极电流 | 0.2A |
| IC-最大集电极电流 | 0.2A |
| VCBO-集基级击穿电压 | 180V |
| VCEO-CE结击穿电压 | 150V |
| VCEO-集射级击穿电压 | 150V |
| VEBO-射基级击穿电压 | 6V |
| AC and DC characteristics | |
| fT-变换频率 | 100MHZ |
| hFE-最小直流增益 | 60 |
| Hfe-最小直流增益 | 60 |
| Environment and package | |
| 封装类型1 | SOT363 |
| 最大工作温度 | 150℃ |
| Other | |
| Pd-功率耗散 | 0.2W |
| Pd-最大功率耗散 | 0.2W |
| VCE(sat)-CE结饱和压降 | 0.2V |
| VCE(sat)-集射级饱和压降 | 0.2V |
| 引脚数量1 | 6 |