TECH PUBLIC(台舟)China
MMUN2213LT1G
Single, Pre-Biased Bipolar Transistors外延平面结构、内置偏置电阻的数字晶体管，有无铅版本且符合RoHS标准
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 50V |
| 集电极电流(Ic) | 100mA |
| Other | |
| 数量 | 1个NPN-预偏置 |
| 耗散功率(Pd) | 200mW |
Documents
No documents are linked to this part yet.