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View full reportTechnical parameters
| Power | |
|---|---|
| Power - Max | 350mW |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Gain | - |
| Noise Figure (dB Typ @ f) | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Other | |
| Manufacturer | Fairchild Semiconductor |
| Packaging | Bulk |
| Part Status | Obsolete |
| Series | - |
| Transistor Type | NPN |