NXP SemiconductorsNetherlands
RF POWER LDMOS TRANSISTOR 1.8-600MHZ 300W 50V SOT1736
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View full reportTechnical parameters
| Power | |
|---|---|
| Drain-Source Breakdown Voltage | 133 Vdc (Min) |
| Drain-Source Voltage | -0.5, +133 Vdc |
| Gate-Source Voltage | -6.0, +10 Vdc |
| Gate Threshold Voltage | 1.8 Vdc (Min) |
| AC and DC characteristics | |
| Power Gain | 27.0 dB (Typ) |
| Environment and package | |
| Operating Junction Temperature Range | -40 to +225 °C |
| Package | TO-270WB-4 PLASTIC |
| Other | |
| Drain Efficiency | 71.0 % (Typ) |