NBB-300-SR

AMP RF MMIC 12.5GHZ 13.8DBM 4-SMD

NBB-300-SR is a cascadable broadband GaAs MMIC amplifier from DC to 12GHz in a Micro-X 4-pin ceramic package, with 13.0dB typical gain, +13.8dBm P1dB, operating temperature -45 to +85°C, RoHS compliant andChecked against the datasheet

See alternatives Ask AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

Datasheet-verified parameters

18 items

Parameter	Value and test conditions	Source
Package	Micro-X, 4-pin, Ceramic
Operating Temperature	-45 to +85 °C
RoHS	Compliant per EU Directive 2011/65/EU
Halogen Free	Halogen free per IEC 61249-2-21
Frequency Range	DC to 12GHz
Small Signal Power Gain, S21	Typ 13.0 dB (f = 0.1GHz to 1.0GHz), Typ 11.0 dB (f = 1.0GHz to 4.0GHz), Max 11.0 dB (f = 4.0GHz to 6.0GHz), Typ 9.0 dB (f = 6.0GHz to 12.0GHz), Max 8.0 dB (f = 12.0GHz to 14.0GHz); Condition: $V_{D}=+3.9V, I_{CC}=50mA, Z_{0}=50Ω, T_{A}=+25°C$
Output Power at -1dB Compression, P1dB	Typ 13.0 dBm (f = 2.0GHz), Max 13.8 dBm (f = 6.0GHz), Max 12.0 dBm (f = 14.0GHz); Condition: $V_{D}=+3.9V, I_{CC}=50mA, Z_{0}=50Ω, T_{A}=+25°C$
Noise Figure, NF	Typ 5.1 dB (f = 3.0GHz); Condition: $V_{D}=+3.9V, I_{CC}=50mA, Z_{0}=50Ω, T_{A}=+25°C$
Third Order Intercept, IP3	Typ +27.1 dBm (f = 2.0GHz); Condition: $V_{D}=+3.9V, I_{CC}=50mA, Z_{0}=50Ω, T_{A}=+25°C$
Device Voltage, $V_{D}$	Min 3.6 V, Typ 3.9 V, Max 4.2 V
Recommended Operating Conditions	$V_{D}=+3.9V, I_{CC}=50mA, Z_{0}=50Ω, T_{A}=+25°C$
Absolute Maximum Ratings	RF Input Power: +20 dBm; Power Dissipation: 300 mW; Device Current: 70 mA; Channel Temperature: 150 °C; Operating Temperature: -45 to +85 °C; Storage Temperature: -65 to +150 °C
Thermal Resistance, $θ_{JC}$	Typ 272 °C/W
Gain Flatness, GF	Typ ±0.6 dB (f = 0.10GHz to 4.0GHz); Condition: $V_{D}=+3.9V, I_{CC}=50mA, Z_{0}=50Ω, T_{A}=+25°C$
Input and Output VSWR	Typ 2.4:1 (f = 0.1GHz to 4.0GHz), Max 2.0:1 (f = 4.0GHz to 6.0GHz), Max 2.5:1 (f = 6.0GHz to 12.0GHz); Condition: $V_{D}=+3.9V, I_{CC}=50mA, Z_{0}=50Ω, T_{A}=+25°C$
Reverse Isolation, S12	Typ -15 dB (f = 0.1GHz to 12.0GHz); Condition: $V_{D}=+3.9V, I_{CC}=50mA, Z_{0}=50Ω, T_{A}=+25°C$
Gain Temperature Coefficient, $δG_{T}/δT$	Typ -0.0015 dB/°C
Pb Free Category	e3

All parameters (6)ExpandCollapse

Power
Device Voltage, $V_{D}$	3.9 V (Typ)
Output Power at -1dB Compression, P1dB	13.8 dBm (Max)
AC and DC characteristics
Bandwidth, BW	12.5 GHz (Typ)
Noise Figure, NF	5.1 dB (Typ)
Environment and package
Operating Temperature	-45 to +85 °C
Package	Micro-X, 4-pin, Ceramic

Pinout and package

Pin	Name	Function	Source
,		Same as pin 2.

Documents

DatasheetDatasheet · 545.5 KB · 2026-10-29

Open document center

Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.