Fairchild/ON SemiconductorUnited States

NDS332P

Single FETs, MOSFETsSOT-23

MOSFET P-CH 20V 1A SOT-23

NDS332P is a P-Channel Logic Level Enhancement Mode MOSFET with -20V breakdown voltage, 0.41Ω RDS(ON) @ VGS=-2.7V, in SOT-23 package, suitable for low-voltage power management.Checked against the datasheet

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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage-20 VMax: - (VGS=0 V，ID=-250 μA)
Continuous drain current-1.5 AMax: - (VGS=-2.7 V，VDS=-5 V)，Max: - (VGS=-4.5 V，VDS=-5 V)
On-resistance410 mΩMax · Max: 0.41 Ω (VGS=-2.7 V，ID=-1 A)，Max: 0.3 Ω (VGS=-4.5 V，ID=-1.1 A)
Gate threshold voltage-1 VMax · Max: -1 V (VDS=VGS，ID=-250 μA)，Max: -0.8 V (TJ=125°C)

Datasheet-verified parameters

22 items
ParameterValue and test conditionsSource
ChannelP-Channel
Drain-Source Breakdown VoltageMin: -20 V, Typ: -, Max: - (VGS=0 V, ID=-250 μA)
On-State Drain CurrentMin: -1.5 A, Typ: -, Max: - (VGS=-2.7 V, VDS=-5 V); Min: -2.5 A, Typ: -, Max: - (VGS=-4.5 V, VDS=-5 V)
Static Drain-Source On-ResistanceMin: -, Typ: 0.35 Ω, Max: 0.41 Ω (VGS=-2.7 V, ID=-1 A); Min: -, Typ: 0.26 Ω, Max: 0.3 Ω (VGS=-4.5 V, ID=-1.1 A)
Gate Threshold VoltageMin: -0.4 V, Typ: -0.6 V, Max: -1 V (VDS=VGS, ID=-250 μA); Min: -0.3 V, Typ: -0.45 V, Max: -0.8 V (TJ=125°C)
PackageSOT-23
Operating TemperatureTJ=125°C (implied by test conditions)
Zero Gate Voltage Drain CurrentMin: -, Typ: -, Max: -1 μA (VDS=-16 V, VGS=0 V); Min: -, Typ: -, Max: -10 μA (TJ=55°C)
Gate - Body Leakage CurrentMin: -, Typ: -, Max: 100 nA (VGS=8 V, VDS=0 V); Min: -, Typ: -, Max: -100 nA (VGS=-8 V, VDS=0 V)
Forward TransconductanceMin: -, Typ: 2.2 S, Max: - (VDS=-5 V, ID=-1 A)
Input CapacitanceMin: -, Typ: 195 pF, Max: - (VDS=-10 V, VGS=0 V, f=1.0 MHz)
Output CapacitanceMin: -, Typ: 105 pF, Max: - (VDS=-10 V, VGS=0 V, f=1.0 MHz)
Reverse Transfer CapacitanceMin: -, Typ: 40 pF, Max: - (VDS=-10 V, VGS=0 V, f=1.0 MHz)
Turn - On Delay TimeMin: -, Typ: 8 ns, Max: 15 ns (VDD=-6 V, ID=-1 A, VGS=-4.5 V, RGEN=6 Ω)
Turn - On Rise TimeMin: -, Typ: 30 ns, Max: 45 ns (VDD=-6 V, ID=-1 A, VGS=-4.5 V, RGEN=6 Ω)
Turn - Off Delay TimeMin: -, Typ: 25 ns, Max: 45 ns (VDD=-6 V, ID=-1 A, VGS=-4.5 V, RGEN=6 Ω)
Turn - Off Fall TimeMin: -, Typ: 27 ns, Max: 45 ns (VDD=-6 V, ID=-1 A, VGS=-4.5 V, RGEN=6 Ω)
Total Gate ChargeMin: -, Typ: 3.7 nC, Max: 5 nC (VDS=-5 V, ID=-1 A, VGS=-4.5 V)
Gate-Source ChargeMin: -, Typ: 0.5 nC, Max: - (VDS=-5 V, ID=-1 A, VGS=-4.5 V)
Gate-Drain ChargeMin: -, Typ: 0.9 nC, Max: - (VDS=-5 V, ID=-1 A, VGS=-4.5 V)
Maximum Continuous Source CurrentMin: -, Typ: -, Max: -0.42 A
Drain-Source Diode Forward VoltageMin: -, Typ: -0.75 V, Max: -1.2 V (VGS=0 V, IS=-0.42 A)
All parameters (7)ExpandCollapse
Environment and package
PackageSOT-23
Other
I_D-1 A
P_D0.5 W
R_DS(ON)0.41 Ω (Max)
T_J, T_STG-55 to 150 °C
V_DSS-20 V
V_GS(th)-1 V (Max)

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DatasheetDatasheet · 360.6 KB · 2026-11-09
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