PACKAGE DIMENSIONS (Unit: mm)

PACKAGE DIMENSIONS (Unit: mm)

Renesas Electronics CorporationJapan

NE3210S01

Transistors - FETs, MOSFETs - RF4-pin

NE3210S01 is an X to Ku band super low noise N-channel HJ-FET with typical NF of 0.35 dB and gain of 13.5 dB, suitable for DBS systems.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

16 items
ParameterValue and test conditionsSource
Package4-pin (1. Source, 2. Drain, 3. Source, 4. Gate)
Operating TemperatureChannel Temperature: 125 °C; Storage Temperature: -65 to +125 °C
Drain to Source VoltageMax: 4.0 V (Absolute Maximum); Recommended: Min 1 V, Typ 2 V, Max 3 V
Gate to Source VoltageMax: -3.0 V (Absolute Maximum)
Drain CurrentRecommended: Min 5 mA, Typ 10 mA, Max 15 mA
Saturated Drain CurrentMin 15 mA, Typ 40 mA, Max 70 mA (VDS=2 V, VGS=0 V)
Gate CurrentMax: 100 μA (Absolute Maximum)
Gate to Source Leak CurrentTyp 0.5 μA, Max 10 μA (VGS=-3 V)
Total Power DissipationMax: 165 mW
Input PowerMax: 0 dBm
Gate to Source Cut off VoltageMin -0.2 V, Typ -0.7 V, Max -2.0 V (VDS=2 V, IDS=100 μA)
TransconductanceMin 40 mS, Typ 55 mS (VDS=2 V, IDS=10 mA)
Noise FigureTyp 0.35 dB, Max 0.45 dB (VDS=2 V, IDS=10 mA, f=12 GHz)
Associated GainMin 12.0 dB, Typ 13.5 dB (VDS=2 V, IDS=10 mA, f=12 GHz)
Gate LengthLg ≤ 0.20 μm
Gate WidthWg = 160 μm

Pinout and package

Package4-pin (1. Source, 2. Drain, 3. Source, 4. Gate)

PinNameFunctionSource
1Source
2Drain
3Source
4Gate

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