79A Package Dimensions (Unit: …

NE650R479A

MES FET N-CH 0.4W 15V 79A

NEC 0.4 W L/S-band GaAs MES FET in 79A package, designed for middle power transmitter driver amplifiers in mobile communication systems.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

17 items

Parameter	Value and test conditions	Source
Type	N-CHANNEL GaAs MES FET
Package	79A
Drain to Source Voltage	Max: 15 V (TA = 25 °C)
Gate to Source Voltage	Max: -7 V (TA = 25 °C)
Drain Current	Max: 0.6 A (TA = 25 °C)
Total Power Dissipation	Max: 2.5 W (TA = 25 °C)
Channel Temperature	Max: 150 °C (TA = 25 °C)
Storage Temperature	-65 to +150 °C
Recommended Drain to Source Voltage	Max: 6.0 V
Recommended Channel Temperature	Max: +125 °C
Saturated Drain Current	Typ: 0.35 A (VDS = 2.5 V, VGS = 0 V, TA = 25 °C)
Pinch-off Voltage	Min: -2.5 V, Max: -0.5 V (VDS = 2.5 V, ID = 2 mA, TA = 25 °C)
Gate to Drain Break Down Voltage	Min: 13 V (Igd = 2 mA, TA = 25 °C)
Thermal Resistance	Typ: 30 °C/W, Max: 50 °C/W (Channel to Case, TA = 25 °C)
Output Power at 1 dB Gain Compression Point	Typ: 26.0 dBm (f = 1.9 GHz, VDS = 6.0 V, IDset = 100 mA, TA = 25 °C)
Linear Gain	Min: 13.0 dB, Typ: 14.0 dB (f = 1.9 GHz, VDS = 6.0 V, IDset = 100 mA, TA = 25 °C)
Power Added Efficiency	Typ: 45 % (f = 1.9 GHz, VDS = 6.0 V, IDset = 100 mA, TA = 25 °C)

All parameters (7)ExpandCollapse

Power
Drain to Source Voltage	15 V
Power Added Efficiency	45 % (Typ)
Total Power Dissipation	2.5 W
AC and DC characteristics
Linear Gain	14.0 dB (Typ)
Output Power at 1 dB Gain Compression Point	26.0 dBm (Typ)
Environment and package
Package	79A
Storage Temperature	-65 to +150 °C

Pinout and package

Package79A

Pin	Name	Function	Source
1		Drain
2		Source
3		Gate

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DatasheetDatasheet · 59.3 KB · 2026-10-29

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