PACKAGE OUTLINE 79A

PACKAGE OUTLINE 79A

CELUnited States

NE651R479A

RF FETs, MOSFETs79A

IC RF FET GAAS HJ-FET 1W 79A

NE651R479A is a GaAs HJ-FET for medium power mobile communications transmitters, delivering 27 dBm at 3.5 V and 30 dBm at 5 V, in 79A package with low thermal resistance of 30°C/W.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

16 items
ParameterValue and test conditionsSource
Package79A
Channel TemperatureMax +125 °C (Recommended Operating Limits)
RoHS ComplianceCompliant (Pb-free, suffix -A)
Drain to Source VoltageMax 8 V (Absolute Maximum Ratings)
Gate to Source VoltageMax -4 V (Absolute Maximum Ratings)
Drain CurrentMax 1.0 A (Absolute Maximum Ratings)
Total Power DissipationMax 2.5 W (Absolute Maximum Ratings)
Storage Temperature-65 to +150 °C (Absolute Maximum Ratings)
Output PowerTyp 29.5 dBm (f = 1.9 GHz, VDS=5 V, PIN=+15 dBm, RG=1 kΩ, IDSQ=50 mA)
Linear GainTyp 12.0 dB (f = 1.9 GHz, VDS=3.5 V, PIN=+15 dBm, RG=1 kΩ, IDSQ=50 mA)
Power Added EfficiencyMin 52 %, Typ 60 % (f = 1.9 GHz, VDS=3.5 V, PIN=+15 dBm, RG=1 kΩ, IDSQ=50 mA)
Saturated Drain CurrentTyp 0.7 A (VDS=2.5 V, VGS=0 V)
Pinch-Off VoltageMin -2.0 V, Max -0.4 V (VDS=2.5 V, ID=14 mA)
Gate to Drain Break Down VoltageMin 12 V (IGD=14 mA)
Thermal Resistance, Channel to CaseTyp 30 °C/W, Max 50 °C/W
Gain CompressionMax 3.0 dB (Recommended Operating Limits)
All parameters (10)ExpandCollapse
Environment and package
Package79A
Other
BVGD12 V (Min)
GL12.0 dB (Typ)
IDSS0.7 A (Typ)
POUT27.0 dBm (Typ)
PT2.5 W
RTH30 °C/W (Typ)
TCH150 °C
VDS8 V
VP-2.0 V (Min)

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DatasheetDatasheet · 510.9 KB · 2026-10-29
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