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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage250 V
Collector current15 AMax
DC current gain753A
Power200 WMax
Power
Current - Collector Cutoff (Max)50µA (ICBO)
Current - Collector (Ic) (Max)15 A
Power - Max200 W
Voltage - Collector Emitter Breakdown (Max)250 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 3A, 5V
Frequency - Transition30MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P-3L
Other
Base Product NumberNJW3281
Mfronsemi
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 800mA, 8A

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