onsemiUnited States
NSBA114TDXV6T1
Bipolar Transistor Arrays, Pre-BiasedTRANS 2PNP PREBIAS 0.5W SOT563
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 500mW |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Other | |
| Base Product Number | NSBA114 |
| Manufacturer | onsemi |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Obsolete |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Series | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |