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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current915 mATA=25°C
On-resistance127 mΩMax · 4.5 V (Typ)
Gate threshold voltage1.1 VMax · 250μA

Datasheet-verified parameters

15 items
ParameterValue and test conditionsSource
ChannelN-Channel
Drain-to-Source Voltage20 V
Continuous Drain Current915 mA @ TA=25°C
On-Resistance0.127 Ω @ 4.5 V (Typ)
PackageSC-75 / SOT-416 (Pb-Free)
Operating Junction and Storage Temperature-55 to 150 °C
RoHSPb-Free
Gate-to-Source Voltage±6.0 V
Power Dissipation300 mW (Steady State)
Pulsed Drain Current1.3 A @ tp=10 μs
Continuous Source Current (Body Diode)280 mA
Lead Temperature for Soldering Purposes260 °C (1/8 inch from case for 10 s)
Junction-to-Ambient Thermal Resistance416 °C/W (SC-75 / SOT-416)
Forward Diode Voltage0.67 V (Typ) @ VGS=0 V, IS=200 mA, TJ=25°C
ESD Protected GateYes
All parameters (21)ExpandCollapse
Power
Current - Continuous Drain (Id) @ 25°C915mA (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Power Dissipation (Max)300mW (Tj)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75, SOT-416
Other
Base Product NumberNTA4153
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 16 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs230mOhm @ 600mA, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±6V
Vgs(th) (Max) @ Id1.1V @ 250µA

Pinout and package

MARKING DIAGRAM & PIN ASSIGNME…
MARKING DIAGRAM & PIN ASSIGNME…
Package: SC-75 / SOT-416 (Pb-Free)
PinNameFunctionSource
1Gate
2Source
3Drain

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.