onsemiUnited States
MOSFET P CH 60V 1.7A SOT223
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage60 V
Continuous drain current1.7 A
On-resistance185 mΩMax · 2.4A
Gate threshold voltage4 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 (TO-261) |
| Other | |
| Base Product Number | NVF295 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 492 pF @ 25 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 2.4A, 10V |
| Series | Automotive, AEC-Q101 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
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