NIKO-SEM(尼克森)China
P1006BD · MOSFET · TO-252
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View full reportTechnical parameters
| Configuration | Single |
| ESD Diode | No |
| ID (A) | 66 |
| RDS(ON)mΩmax at 10V | 10 |
| RDS(ON)mΩmax at 4.5V | 13 |
| Schottky Diode | No |
| Type | N |
| Typical Ciss(pF) | 1920 |
| Typical Crss(pF) | 140 |
| Typical Qgd(nC) | 12 |
| Typical Qg(nC) | 42 |
| VDS (V) | 60 |
| VGS(th) max | 2.3 |
| VGS (±V) | 20 |