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Technical parameters

Key specs

Channels1
Isolation voltage5 kV
Output typeTransistor
Current transfer ratio50 ~ 400 %50% to 400% (at IF = 5 mA,VCE = 5 V,Ta = 25 °C)

Datasheet-verified parameters

20 items
ParameterValue and test conditionsSource
Channels1
Isolation voltage5 kV (rms)
Output typePhototransistor
Current transfer ratio50% to 400% (at IF = 5 mA, VCE = 5 V, Ta = 25 °C)
Package4-pin DIP
Operating temperature-30 to +100 °C
RoHSCompliant (2011/65/EU)
Forward current50 mA
Peak forward current1 A (Pulse width≦100μs, Duty ratio : 0.001)
Reverse voltage6 V
Input power dissipation70 mW
Collector-emitter voltage80 V
Emitter-collector voltage6 V
Collector current50 mA
Collector power dissipation150 mW
Total power dissipation200 mW
Storage temperature-55 to +125 °C
Soldering temperature270 °C (For 10s)
Flammability gradeUL 94V-0
CertificationUL1577 (File No. E64380), CSA (File No. CA95323)
All parameters (7)ExpandCollapse
Power
Collector current50 mA
Collector-emitter voltage80V
Forward current50 mA
Input-output isolation voltage(rms)5kV
Environment and package
Operating temperature-30 to +100 °C
Package4-pin DIP
Other
CTR50% to 400% (at $| _ { _ { F } } = 5 mA , V _ { C E } = 5 V , T a = 25 ^ { } C )$

Pinout and package

Package4-pin DIP

PinNameFunctionSource
1Anode
2Cathode
3Emitter
4Collector

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