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View full reportTechnical parameters
| Power | |
|---|---|
| IC(25℃)-最大集电极电流 | 300A |
| ICM-集电极峰值电流 | 900A |
| VCES-集射极阻断电压 | 650V |
| Environment and package | |
| 封装类型1 | Die |
| Other | |
| Eoff-关断损耗能量 | NmJ |
| Eon-开通损耗能量 | NmJ |
| Qg-栅极电荷 | 312nC |
| tf-下降时间 | 67ns |
| VCE(sat)-集射级饱和压降 | 1.15V |
| Vges-门极发射极耐压 | 20V |
| Vge(th)-门极发射极阈值 | 6.5 |
| 内置ESD保护二极管 | 0 |
| 内置串联二极管 | 0 |
| 引脚数量1 | 0 |
| 软开关 | 0 |
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