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Technical parameters

Power
IC-最大集电极电流0.1A
VCEO-CE结击穿电压50V
VCEO-集射级击穿电压50V
AC and DC characteristics
fT-变换频率230MHZ
hFE-最小直流增益35
Hfe-最小直流增益35
Environment and package
封装类型1DFN
Other
Pd-功率耗散0.25W
Pd-最大功率耗散0.25W
偏置电阻R12.2KΩ
偏置电阻R210KΩ
引脚数量13

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