Nexperia USA Inc.Netherlands
PEMD17,115
Bipolar Transistor Arrays, Pre-BiasedTRANS PREBIAS 1NPN 1PNP SOT666
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 1µA |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 300mW |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-666 |
| Other | |
| Base Product Number | PEMD17 |
| Manufacturer | Nexperia USA Inc. |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Series | - |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |