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Technical parameters

Power
ID-最大漏极电流10A
VDSS-最大漏源电压1200V
Vgs(th)-门槛电压4V
功耗系数1.8℃/W
峰值电流20A
AC and DC characteristics
RDS(on)-漏源导通阻抗370mΩ
Environment and package
封装类型1TO247
最大工作温度150℃
最小工作温度-55℃
Other
Ciss-输入等效电容259pF
Pd-功率耗散62.5W
Qg-栅极电荷20.4nC
引脚数量13
栅源耐压Vgs+25V
栅源耐压Vgs-10V

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