NXP SemiconductorsNetherlands
DIODE GEN PURP 70V 215MA TO236AB
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View full reportTechnical parameters
Key specs
Reverse voltage70 V
Average rectified current215 mA
Forward voltage1.25 VMax · 150 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 215mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 70 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150°C (Max) |
| Package | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB |
| Other | |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Mfr | NXP Semiconductors |
| Product Status | Active |
| Reverse Recovery Time (trr) | 4 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |