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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage25 V
Collector current50 mAMax
DC current gain1501mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)50 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)25 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 10V
Frequency - Transition240MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
Base Product NumberPN3565
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic350mV @ 100µA, 1mA

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