All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage25 V
Collector current500 mAMax
DC current gain1501mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)25 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 10V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberPN356
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic350mV @ 100µA, 1mA

Documents

No documents are linked to this part yet.