VBsemi(微碧半导体)China
PSMN008-75B,118-VB
Transistors - FETs, MOSFETs - SingleN沟道;电压:80V;电流:120A;导通电阻:6(mΩ)
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage80 V
Continuous drain current120 A
On-resistance6 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 80V |
| 连续漏极电流(Id) | 120A |
| Other | |
| 导通电阻(RDS(on)) | 6mΩ@10V |
| 数量 | 1个N沟道 |
Documents
No documents are linked to this part yet.