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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage75 V
Continuous drain current75 A
On-resistance8.5 mΩMax · 25A
Gate threshold voltage4 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)230W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Other
Base Product NumberPSMN008
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs122.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5260 pF @ 25 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs8.5mOhm @ 25A, 10V
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

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