QNHCHIP(乾能惠)China
30V/12A 双 N 沟道，11mΩ@10V/15.5mΩ@4.5V，48A 大脉冲电流 + 36mJ 雪崩能量，±20V 宽栅压，-55~150℃宽温环保，适配负载开关 / 电源管理 / PWM
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current12 A
On-resistance11 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 12A |
| Other | |
| 导通电阻(RDS(on)) | 11mΩ@10V |
| 数量 | 2个N沟道 |
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