QNHCHIP(乾能惠)China
1个N沟道，共源配置；Vdss=40V，Id=40A；RDS(ON)=11.5mΩ@4.5V;7.6mΩ@10V；Vgs=±20V，VGS(th)=1.1~2.4V；Ciss=1209pF，Coss=167pF，Crss=153pF；Pd=114W，Qg=48nC@10V；TJ=-55~150℃；无铅、先进沟槽工艺；应用于负载开关、PWM应用、电源管理。
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current40 A
On-resistance7.6 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 40V |
| 连续漏极电流(Id) | 40A |
| Other | |
| 导通电阻(RDS(on)) | 7.6mΩ@10V |
| 数量 | 1个N沟道 |
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