Rohm SemiconductorJapan
MOSFET N-CH 600V 10A TO220FM
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current10 A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 50W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FM |
| Other | |
| Base Product Number | R6010 |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | - |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | - |