Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection
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View full reportTechnical parameters
| Power | |
|---|---|
| Supply Voltage (V) | 6.5 - 18 |
| AC and DC characteristics | |
| Turn-Off Prop Delay (ns) | 20 |
| Turn-On Prop Delay (ns) | 20 |
| Environment and package | |
| Moisture Sensitivity Level (MSL) | 3 |
| Pkg. Dimensions (mm) | 4.0 x 4.0 x 0.90 |
| Qualification Level | Standard |
| Temp. Range (°C) | -40°C to +125°C |
| Other | |
| Application | Switching-mode power supply, GaN FET driver application |
| Carrier Type | Reel |
| Gate Drive (V) | 5.8 |
| ISINK (Max) (mA) | 3000 |
| ISOURCE (Max) (mA) | 2000 |
| Key Features | Wide operating voltage range of 6.5V to 18V, Up to 18V logic inputs (regardless of VDD level), Optimized to drive enhancement mode GaN FETs |
| Lead Count (#) | 16 |
| Length (mm) | 4 |
| MOQ | 6000 |
| Output Type | Low Side |
| Parametric Category | GaN FET Drivers |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Pb (Lead) Free | Yes |
| Pitch (mm) | 0.7 |
| Pkg. Type | QFN |
| Price (USD) | $2.59614 |
| Product Category | GaN FET Drivers |
| Thickness (mm) | 0.9 |
| Width (mm) | 4 |