Rohm SemiconductorJapan
DIODE SCHOTTKY 30V 1.5A PMDS
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Technical parameters
Key specs
Reverse voltage30 V
Average rectified current1.5 A
Forward voltage480 mVMax · 1 A
TypeSchottkyFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1.5A |
| Current - Reverse Leakage @ Vr | 50 µA @ 30 V |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 480 mV @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150°C(Max) |
| Package | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | PMDS |
| Other | |
| Base Product Number | RB150 |
| Capacitance @ Vr, F | - |
| Diode Type | Schottky |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |