VBsemi(微碧半导体)China
RDD020N50-VB
Transistors - FETs, MOSFETs - SingleTO252；N—Channel沟道,500V；14.5A；RDS(ON)=243mΩ@VGS=10V,VGS=30V；Vth=2~4V；
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Key specs
ChannelN-channel
Drain-source voltage500 V
Continuous drain current14.5 A
On-resistance243 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 500V |
| 连续漏极电流(Id) | 14.5A |
| Other | |
| 导通电阻(RDS(on)) | 243mΩ@10V |
| 数量 | 1个N沟道 |