VBsemi(微碧半导体)China
RDD020N60-VB
Transistors - FETs, MOSFETs - SingleTO252；N—Channel沟道,650V；4.5A；RDS(ON)=2100mΩ@VGS=10V,VGS=±30V；Vth=2.5~5V；
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Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current4.5 A
On-resistance2.1 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 4.5A |
| Other | |
| 导通电阻(RDS(on)) | 2.1Ω@10V |
| 数量 | 1个N沟道 |