Rohm SemiconductorJapan
780nm Invisible 2beam Laser Diode
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View full reportTechnical parameters
| Power | |
|---|---|
| LD Reverse Voltage(Max.)[V] | 2 |
| Monitor Current Im(Max.)[mA] | 1.5 |
| Monitor Current Im(Min.)[mA] | 0.3 |
| Monitor Current Im(Typ.)[mA] | 0.7 |
| Operating Current Iop(Max.)[mA] | 55 |
| Operating Current Iop(Typ.)[mA] | 42 |
| Operating Voltage Vop(Max.)[V] | 2.4 |
| Operating Voltage Vop(Typ.)[V] | 1.8 |
| PinPD Reverse Voltage(Max.)[V] | 20 |
| Threshold Current Ith(Max.)[mA] | 20 |
| Threshold Current Ith(Min.)[mA] | 6 |
| Threshold Current Ith(Typ.)[mA] | 10 |
| AC and DC characteristics | |
| Emission Point Accuracy ⊿XYZ(Max.)[µm] | 80 |
| Emission Point Accuracy ⊿XYZ(Min.)[µm] | -80 |
| Emission Point Accuracy ⊿XYZ(Typ.)[µm] | 0 |
| Environment and package | |
| Operating Temperature (Max.)[°C] | 60 |
| Operating Temperature (Min.)[°C] | -10 |
| Package Size [mm] | φ5.6 |
| Other | |
| Application | Laser printer |
| Beam Divergence θ//(Max.)[deg] | 13 |
| Beam Divergence θ⊥(Max.)[deg] | 35 |
| Beam Divergence θ//(Min.)[deg] | 7 |
| Beam Divergence θ⊥(Min.)[deg] | 22 |
| Beam Divergence θ//(Typ.)[deg] | 9.5 |
| Beam Divergence θ⊥(Typ.)[deg] | 27.5 |
| Beam Tolerance ⊿θ//(Max.)[deg] | 2 |
| Beam Tolerance ⊿θ⊥(Max.)[deg] | 3 |
| Beam Tolerance ⊿θ//(Min.)[deg] | -2 |
| Beam Tolerance ⊿θ⊥(Min.)[deg] | -3 |
| Beam Tolerance ⊿θ//(Typ.)[deg] | 0 |
| Beam Tolerance ⊿θ⊥(Typ.)[deg] | 0 |
| Emission Point Distance(Typ.)[µm] | 30 |
| Optical Output Condition Po(Typ.)[mW] | 25 |
| Optical Output Po(Max.)[mW] | 25 |
| Output Efficiency η(Max.)[W/A] | 1 |
| Output Efficiency η(Min.)[W/A] | 0.5 |
| Output Efficiency η(Typ.)[W/A] | 0.8 |
| Polarity | N(LD Anode / LD Anode / PD Cathode) |
| Wave-length λ(Max.)[nm] | 800 |
| Wave-length λ(Min.)[nm] | 780 |
| Wave-length λ(Typ.)[nm] | 792 |