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View full reportTechnical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 4A |
| VDSS-最大漏源电压 | 650V |
| Vgs(th)-门槛电压 | 3.3V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 1000mΩ |
| Environment and package | |
| 封装类型1 | TO252 |
| Other | |
| Pd-功率耗散 | 37W |
| Qg-栅极电荷 | 9.1nC |
| Vgs-栅源耐压 | 30V |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 3 |
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