RS1DLH
Taiwan Semiconductor CorporationTaiwan, China

RS1DLH

Not For New DesignsSingle DiodesSOD-123

150NS, 0.8A, 200V, FAST RECOVERY

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Technical parameters

Key specs

Reverse voltage200 V
Average rectified current1 A
Forward voltage1.3 VMax · 800 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
Power
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 800 mA
Environment and package
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C ~ 150°C
PackageTape & Reel (TR)
Package / CaseSOD-123
QualificationAEC-Q101
Supplier Device PackageSub SMA
Other
Capacitance @ Vr, F10pF @ 4V, 1MHz
MfrTaiwan Semiconductor Corporation
Product StatusNot For New Designs
Reverse Recovery Time (trr)150 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

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