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Technical parameters
| Power | |
|---|---|
| 单通道静态电流 | 650uA |
| 最大供电电压 | 5.5V |
| 最大偏置电流 | 50pA |
| 最小供电电压 | 2.7V |
| AC and DC characteristics | |
| 低频电压噪声 | 0.93uVPP |
| 共模抑制比 | 120dB |
| 增益带宽 | 4.3MHz |
| 失调电压温漂 | 0.03uV/℃ |
| 最大失调电压 | 50uV |
| 最大失调电流 | 10pA |
| 电压噪声密度 | 45nV/√Hz |
| 电源抑制比 | 120dB |
| 输出压摆率 | 2.5V/us |
| Environment and package | |
| 封装类型1 | SOIC |
| 封装类型2 | TSSOP |
| Other | |
| EMI滤波 | 0 |
| 使能关断 | 0 |
| 共模输入(与VCC+差值) | 0.2V |
| 共模输入(与VCC-差值) | -0.2V |
| 引脚数量1 | 14 |
| 引脚数量2 | 14 |
| 轨到轨输入 | 1 |
| 轨到轨输出 | 1 |
| 零漂移特性 | 1 |