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Technical parameters

Key specs

Output current4 µAMax
Input voltage4 ~ 36 V
Dropout voltage160 mVTyp · 160 mV typ. (VADJ / EN = 4.0 V,IOUT = 10 mA)
Power
Built-in overcurrent protection circuitA ceramic capacitor can be used. (1.0 μF to 1000 μF)
Current consumptionDuring operation: 30 μA typ.
Dropout voltage160 mV typ. (VADJ / EN = 4.0 V, IOUT = 10 mA)
Input voltage4.0 V to 36.0 V
Output currentDuring power-off: 4.0 μA typ.
Reverse current protection functionDetection temperature 175°C typ.
AC and DC characteristics
Offset voltage±5 mV (0.1 mA ≤ IOUT ≤ 50 mA)
Environment and package
Built-in thermal shutdown circuitLimits overcurrent of output transistor.
Lead-free (Sn 100%), halogen-freeTa = −40°C to +125°C
Operation temperature rangeIREV = −5 μA min. (VIN = 0 V, VADJ / EN = 5.0 V, VOUT = 16.0 V)
Other
Input capacitorPossible to output 50 mA (VIN = VADJ / EN + 2.0 V)*1
Output capacitorA ceramic capacitor can be used. (1.0 μF or more)

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