S-19721

This IC, developed by using high-withstand voltage CMOS process technology, is a voltage tracker with a reverse current protection and an anomaly

All alternatives

Output voltage2 V

Output current3.7 µAMax

Input voltage4 ~ 36 V

Dropout voltage330 mVTyp · 330 mV typ. (VADJ = 4.0 V，IOUT = 125 mA)

Power
Built-in overcurrent protection circuit	A ceramic capacitor can be used. (4.7 μF to 1000 μF)
Built-in overvoltage detection circuit	Detection temperature 175°C typ.
Current consumption	During operation: 40 μA typ.
Dropout voltage	330 mV typ. (VADJ = 4.0 V, IOUT = 125 mA)
Input voltage	4.0 V to 36.0 V
Output current	During power-off: 3.7 μA typ.
Output voltage	Adjustable down to 2.0 V min.
Reverse current protection function	A/B type : Detects an output short-circuit of the higher voltage.
AC and DC characteristics
Offset voltage	±4.5 mV (0.1 mA ≤ IOUT ≤ 250 mA)
Environment and package
Built-in thermal shutdown circuit	Limits overcurrent of output transistor.
Lead-free (Sn 100%), halogen-free	Ta = −40°C to +125°C
Operation temperature range	INT pin notifies operation anomaly of the IC. A type : Overvoltage, ground fault, overheat B type : Overvoltage, overheat C type : Ground fault, overheat
Other
Anomaly notification function	IREV = −5 μA min. (VIN = 0 V, VADJ = 5.0 V, VOUT = 16.0 V)
Input capacitor	*Possible to output 250 mA (VIN = VADJ + 2.0 V)1**
Output capacitor	A ceramic capacitor can be used. (4.7 μF or more)