Microchip TechnologyUnited States
DIODE GEN PURP 100V DO5
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View full reportTechnical parameters
Key specs
Reverse voltage100 V
Average rectified current45 A
Forward voltage1.15 VMax · 90 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 45A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 90 A |
| Environment and package | |
| Mounting Type | Stud Mount |
| Operating Temperature - Junction | -65°C~200°C |
| Package | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Supplier Device Package | DO-5 |
| Other | |
| Base Product Number | S341 |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | S34 |
| Speed | Standard Recovery >500ns, > 200mA (Io) |