Rohm SemiconductorJapan
650V, 8A, Silicon-carbide (SiC) SBD Bare Die
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View full reportTechnical parameters
| Power | |
|---|---|
| Continuous Forward Current[A] | 8 |
| Reverse Voltage[V] | 650 |
| Environment and package | |
| Junction Temperature(Max.)[°C] | 175 |
| Storage Temperature (Max.)[°C] | 175 |
| Storage Temperature (Min.)[°C] | -55 |
| Other | |
| Generation | 2nd Gen |