Vishay General Semiconductor - Diodes DivisionUnited States
SBYV26C-M3/73
Single DiodesDIODE GEN PURP 600V 1A DO204AL
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Technical parameters
Key specs
Reverse voltage600 V
Average rectified current1 A
Forward voltage2.5 VMax · 1 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.5 V @ 1 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-204AL (DO-41) |
| Other | |
| Base Product Number | SBYV26 |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| Reverse Recovery Time (trr) | 30 ns |
| Series | SUPERECTIFIER® |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |