DIYI(迪一/芯诺)China
SiC MOSFET SC600N080D
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO252 |
| Other | |
| Max ID(A) | 9.0 |
| PD25℃ | 43.4 |
| Qg(Typ.) | 2.4 |
| RDS(ON)(Ω) | 530.0 |
| Status | Active |
| Tj(℃) | 175 |
| Type | N |
| VDS(V) | 800 |
| VGS25℃ (V) | 2.8 |
| VGS(V) | -10/25 |