Rohm SemiconductorJapan
DIODE SIL CARB 650V 10A TO220FM
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View full reportTechnical parameters
Key specs
Reverse voltage650 V
Average rectified current10 A
Forward voltage1.55 VMax · 10 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 10 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175°C(Max) |
| Package | Tube |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220FM |
| Other | |
| Base Product Number | SCS210 |
| Capacitance @ Vr, F | 365pF @ 1V, 1MHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |