STMicroelectronicsSwitzerland

SCTWA40N12G24AG

Transistors - FETs, MOSFETs - Single

汽车级碳化硅功率 MOSFET 1200 V、75 mOhm（典型值）、33 A，采用 HiP247-4 封装

See alternatives Ask AI FAEDatasheet PDF

All alternatives

View full report

4 alternatives on file. Sign in to view them.

Technical parameters

Key specs

Continuous drain current33 A

Power
连续漏极电流(Id)	33A
Other
耗散功率(Pd)	290W

Documents

DatasheetDatasheet · 500.7 KB · 2026-09-21 DatasheetDatasheet · 44.2 KB · 2026-09-21 DatasheetDatasheet · 41.1 KB · 2026-09-21 Application NoteApplication Note · 6.4 MB · 2026-09-22 MarketingMarketing · 3.9 MB · 2026-09-22 Application NoteApplication Note · 2.7 MB · 2026-09-22 Application NoteApplication Note · 2.6 MB · 2026-09-22 Application NoteApplication Note · 2.3 MB · 2026-09-22 Application NoteApplication Note · 1.8 MB · 2026-09-22 Application NoteApplication Note · 1.8 MB · 2026-09-22 MarketingMarketing · 1.5 MB · 2026-09-22 User ManualUser Manual · 1.5 MB · 2026-09-22 Application NoteApplication Note · 1.3 MB · 2026-09-22 Application NoteApplication Note · 1.1 MB · 2026-09-22 Application NoteApplication Note · 1.1 MB · 2026-09-22 Application NoteApplication Note · 980.7 KB · 2026-09-22 Application NoteApplication Note · 846.9 KB · 2026-09-22 Application NoteApplication Note · 792.5 KB · 2026-09-22 MarketingMarketing · 764.0 KB · 2026-09-22 Application NoteApplication Note · 760.8 KB · 2026-09-22 MarketingMarketing · 602.5 KB · 2026-09-22 Application NoteApplication Note · 582.2 KB · 2026-09-22 Application NoteApplication Note · 555.5 KB · 2026-09-22 Application NoteApplication Note · 416.3 KB · 2026-09-22 MarketingMarketing · 305.2 KB · 2026-09-22 MarketingMarketing · 174.3 KB · 2026-09-22 MarketingMarketing · 127.5 KB · 2026-09-22 MarketingMarketing · 117.9 KB · 2026-09-22 MarketingMarketing · 109.2 KB · 2026-09-22 MarketingMarketing · 101.3 KB · 2026-09-22

Open document center