Vishay General Semiconductor - Diodes DivisionUnited States
DIODE GEN PURP 600V 3.8A SMPD
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Technical parameters
Key specs
Reverse voltage600 V
Average rectified current3.8 A
Forward voltage1.2 VMax · 20 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 3.8A |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 20 A |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), Variant |
| Qualification | AEC-Q101 |
| Supplier Device Package | SMPD |
| Other | |
| Capacitance @ Vr, F | 150pF @ 4V, 1MHz |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Active |
| Reverse Recovery Time (trr) | 3 µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |