SINO-IC(光宇睿芯)China
P沟道增强型MOSFET,电流:-4.7A,耐压:-20V
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Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current4.7 A
On-resistance52 mΩMax · 1.8V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 4.7A |
| Other | |
| 导通电阻(RDS(on)) | 52mΩ@1.8V |
| 数量 | 1个P沟道 |