Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 600V 3A DO201AD
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View full reportTechnical parameters
Key specs
Reverse voltage600 V
Average rectified current3 A
Forward voltage1.7 VMax · 3 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Package / Case | DO-201AD, Axial |
| Supplier Device Package | DO-201AD |
| Other | |
| Base Product Number | SF38 |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |