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Technical parameters

Power
IC(25℃)-最大集电极电流30A
IC-集电极直流电流(25℃)30A
VCE(sat)-集射极导通饱和电压2.1V
VCES-集射极阻断电压650V
Other
Eoff-关断损耗能量NmJ
Eon-开通损耗能量NmJ
IGBT集成二极管1
Qg-栅极电荷NnC
VCE(sat)-集射级饱和压降2.1V
关断损耗能量NmJ
内置整流二极管1
内置整流桥堆1
单位温升N℃/W
宽62.8mm
宽度62.8mm
开通损耗能量NmJ
栅极充电电荷NnC
长33.8mm
长度33.8mm
隔离型IGBT0
集成整流桥堆1
高15.5mm
高度15.5mm

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