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Technical parameters

Power
IC(25℃)-最大集电极电流40A
IC-集电极直流电流(25℃)40A
VCE(sat)-集射极导通饱和电压2.2V
VCES-集射极阻断电压1200V
Other
Eoff-关断损耗能量NmJ
Eon-开通损耗能量NmJ
IGBT集成二极管0
Qg-栅极电荷NnC
VCE(sat)-集射级饱和压降2.2V
关断损耗能量NmJ
内置整流二极管0
内置整流桥堆0
单位温升N℃/W
宽34mm
宽度34mm
开通损耗能量NmJ
栅极充电电荷NnC
长94mm
长度94mm
隔离型IGBT0
集成整流桥堆0
高30mm
高度30mm

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