All alternatives

View full report

Technical parameters

Power
IC(100℃)-最大集电极电流50A
ICM-集电极峰值电流100A
IC-集电极直流电流(100℃)50A
IF-二极管正向电流50A
VCE(sat)-集射极导通饱和电压1.7V
VCES-集射极阻断电压1200V
VRRM-反向重复峰值电压1.66V
二极管正向电压1.66V
二极管正向电流50A
隔离电压2500V
Environment and package
隔离电压等级2500V
Other
Eoff-关断损耗能量3mJ
Eon-开通损耗能量3.4mJ
IGBT集成二极管0
Qg-栅极电荷378nC
VCE(sat)-集射级饱和压降1.7V
VGES(th)-门极发射极阈值6.5V
Vge(th)-门极发射极阈值6.5V
关断损耗能量3mJ
内置整流二极管0
内置整流桥堆0
单位温升0.53℃/W
宽34mm
宽度34mm
开通损耗能量3.4mJ
栅极充电电荷378nC
长94mm
长度94mm
隔离型IGBT0
集成整流桥堆0
高30.5mm
高度30.5mm

Documents

No documents are linked to this part yet.