Vishay SiliconixUnited States
MOSFET P-CH 30V 0.96A SC89-6
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Technical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current960 mA
On-resistance167 mΩMax · 960mA
Gate threshold voltage1.45 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 960mA (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Power Dissipation (Max) | 236mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SC-89 (SOT-563F) |
| Other | |
| Base Product Number | SI1071 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 15 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 167mOhm @ 960mA, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.45V @ 250µA |